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r The MOSFETs drain body junction and a source body junction are reverse-biased in Software Integration 3 of 9 in Software r The MOSFETs drain body junction and a source body junction are reverse-biased

r The MOSFETs drain body junction and a source body junction are reverse-biased using software toconnect uss code 39 for asp.net web,windows application iPhone OS during normal operation. Software USS Code 39 Their sole contribution then is of capacitive nature and included in the drain and source capacitance respectively. Extra devices might be needed to model forward operation should a device ever enter this regime in the application at hand.

. r CMOS ICs further include eld oxide MOSFETs and parasitic BJTs that are at the origin of voltage clamping, abno Software 3 of 9 barcode rmal current ow, and other e ects. Standard MOSFET models do not account for those devices, however, because they do not come to bear unless a circuit is about to enter electrical overstress conditions. Circuit designers do everything possible to prevent this from happening during normal operation.

Still, those parasitic devices must be modelled if one wants to study exceptional events that approach or transgress a circuit s regular range of operation such as latch-up or electrostatic discharge (ESD). They must then be approximated either as separate networks of lumped circuit elements or more accurately as spatially distributed semiconductor devices using technology CAD (TCAD) simulation software..

8.7.7 Conclusions r The observed behavior of semiconductor devices depends on many factors in a complex way. Physical e ects that cont ribute to electrical device characteristics can be classi ed into three categories: - First-order e ects that are satisfyingly approximated by simple hand models, - Second- and higher-order e ects not easily amenable to hand calculation but honored to various degrees by a multitude of established simulation models, - E ects ignored by common models and thus con ning their range of validity. It is important to realize which e ects matter for a given situation or application before opting for some device model, equivalent circuit, or simulation tool..

r Careful calibration of Software 39 barcode transistor models over all operating conditions of interest may be onerous, but is absolutely essential.. r Highly sophisticated models are a mixed blessing because of their many parameters that must be obtained either from measurements or from device simulations. Physical reality and 49 50. p-channel M OSFETs are no Code 39 Extended for None t as susceptible as their n-channel counterparts b ecause hole m obility is inferior. Please refer to sections 11.5.

2, 11.6.3, and 11.

6.2 for illustrations and details..

8.8 APPENDIX II: THE BIPOLAR JUNCTION TRANSISTOR simulation are likely to Software Code39 diverge unless all such parameters are available with good accuracy and statistical relevance. A more in-depth coverage of MOSFET operation and compact models can be found in numerous textbooks such as [234] [231] [187] [235] [236], while [237] gives a thorough overview on the evolution of compact models over the years..

8.8 Appendix II: The Bipolar Junction Transistor BJTs are also known as bi Software barcode 39 polar transistors or simply as bipolars. While CMOS logic makes no use of them functionally, they are present as parasitic devices in any CMOS circuit and participate in ESD protection and in latch-up, two phenomena that are to be explained in sections 11.6.

2 and 11.6.3 respectively.

We will limit our discussion here to a brief comparison of BJTs with MOSFETs to put the reader into a position to understand the respective roles played by BJTs in these two phenomena.. parameter satura tion linear region collector base E emitter Ic region linear parameter tion satura 0 0 off Fig. 8.55 Icons (a), DC t ransfer characteristics (b), and equivalent models (c).

. r While a MOSFET can be approximated as a voltage-controlled current source (VCCS), a BJT to rst order acts like a current-controlled current source (CCCS). When viewed Ib 0 0 Uce abstraction Ib pnp Ic pnp device npn device Ic Ib abstraction npn Design of VLSI Circuits from a purely digital per spective, the MOSFET abstracts to a voltage-controlled switch and the BJT to a current-controlled switch.. r A comparison of g.8.55b and g.8.1b reveals that the output characteristics of a BJT, Ic = f (Ib , Uce ), resemble t hose of a MOSFET, Id = f (Ug s , Uds ). Yet, note that the designations for the linear and saturation regions are permuted! In the case of a BJT, the name linear refers to the proportional relationship between base and collector currents Ic = Ib whereas for a MOSFET it alludes to the behavior as a linear resistor Uds = R Id exhibited as long as the drain-to-source voltage Uds remains small..

r As a consequence of the above, a BJT operated as a switch settles in saturation when fully turned on whereas a MOSFET operates in the linear region in the same situation. r Normally, BJTs are unsymmetric devices by construction with the emitter more strongly doped than the collector. r A typical current gain = in the linear region is o n the order of 100. The thinner the base layer that separates the collector from the emitter, the higher a BJT s current gain..

Ic Ib 9 . Energy E ciency and Heat Removal Energy considerations are no longer con ned to battery-operated circuits. Power dissipation of high-performance CPU chips is on the order of 50 to 120 W, see table 9.1, roughly as much as a craftsman s soldering iron.

Removing that much thermal power necessitates sophisticated packages, heat sinks, heat pipes, forced ventilation, and other costly options. On the input side, fat supply rails and elaborate multiphase step-down converters built from numerous and bulky power transistors, inductors, and capacitors are required to handle massive supply currents without critical voltage drops. Not only costs but also packing density su ers.

Observation 9.1. The problem in battery-operated circuits is where to get the energy from whereas getting the heat out is a major problem in high-performance circuits.

The rst section in this chapter analyzes what CMOS circuits spend energy for at a fairly detailed level. Section 9.2 then gives practical guidelines for how to improve energy e ciency before section 9.

3 summarizes the very basics of heat ow and heat removal..
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